Question: An n - type Si sample is doped at 1 0 1 5 cm ^ 3 . We shine light on it to create EHPS

An n-type Si sample is doped at 1015 cm^3. We shine light on it
to create EHPS
at 109 cm/s. What is the steady state concentration of minority carriers, if
the lifetime is 100 ns? How long does it take for the hole concentration to drop
10%, after the light is switched off? How long for the hole concentration to
reach a value that is 10% higher than the thermal equilibrium value?

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