Question: An n - type Si sample is doped at 1 0 1 5 cm ^ 3 . We shine light on it to create EHPS
An ntype Si sample is doped at cm We shine light on it
to create EHPS
at cms What is the steady state concentration of minority carriers, if
the lifetime is ns How long does it take for the hole concentration to drop
after the light is switched off? How long for the hole concentration to
reach a value that is higher than the thermal equilibrium value?
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