Question: Another equation, which models the velocity-saturated drain current of an MOS transistor is given by Using this equation it is possible to see that velocity

Another equation, which models the velocity-saturated drain current of an MOS transistor is given by

Using this equation it is possible to see that velocity saturation can be modeled by a MOS device with a source-degeneration resistor.

a. Find the value of RS such that IDSAT(VGS, VDS) for the composite transistor in the figure matches the above velocity-saturated drain current equation. Hint: the voltage drop across RS is typically small. Channel length modulation can be ignored.
b. Given Esat = 1.5 V/µm and k’ = µ0Cox = 20 µA/V2, what value of RS is required to model velocity saturation. How does this value depend on W and L?

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock

Solution a RS 0Cox 2 WL b RS 0Cox 2 WL 15 Vm Explanation The value of ... View full answer

blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!