As an engineer in a wafer manufacturing company, you have grown a 1-meter long silicon ingot using the Czochralski method. After the ingot is pulled, it is sliced into wafers. The wafer taken from the top of the ingot has a phosphorus concentration of 9 x 10¹⁴ cm^-3. How many wafers can you get having a resistivity between 2 to 4 Ωcm? Assume wafer thickness of 600 microns and silicon cutting loss of 700 microns per wafer cut.