Assume Fermi-Dirac statistics and the Boltzmann approximation in the problem. (a) A certain semiconductor has a constant density of states in the conduction band given by Dc (E) = mn/(nh2). Using the Boltzmann approximation, write an expression for n, the concentration of electrons in the conduction band. Your expression should contain Ec, EF, mn, T and fundamental constants. (b) The density of states in the valence band for this semiconductor is also constant and given by Dv (E) = mp/(th2). Using the Boltzmann approximation, write an expression for p, the concentration of holes in the valence band. Your expression should contain Ev , EF, mp, T and fundamental constants. (c) Recall from lecture that the electron and hole concentrations are given by n = Nce-(Ec-EF )/(KT ) and p = Ny e (EF - Ev )/(KI ) . For this semiconductor, what is Nc (the effective density of states of the conduction band)? What about Ny (the effective density of states of the valence band)? Your answers should be analytical expressions. (d) If the band gap is E. = 0.50 eV and mn = 0.15m, for this semiconductor, where is the intrinsic Fermi level located relative to the valence band edge? In other words, calculate the numerical value of Ei - Ev