Question: (b) Design (choose doping levels) for a 10 m x 10 m GaAs p+n diode so that it has the following properties at 300K:
(b) Design (choose doping levels) for a 10 m x 10 m GaAs p+n diode so that it has the following properties at 300K: Reverse ("off") saturation current density no greater than 1.5pA in magnitude (prior to breakdown), and Reverse breakdown voltage no smaller than 100V in magnitude. You may use the following properties if needed. (8 marks) Remember also that diffusion length is given by L = . Diffusion coefficient cm s-1 Dn Dp p-type 30 n-type 4.3 Minority lifetime 0.375 ns tp - 18.0
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