Question: Boron is implanted into an n - type Si sample ( Nd = 1 0 1 6 / cm 3 ) , forming an abrupt
Boron is implanted into an ntype Si sample Nd cm
forming an abrupt junction of square cross section with area x cm Assume that the
acceptor concentration in the ptype region is Na cm Calculate Vo x no x po Q and
E o for this junction at equilibrium
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