Question: Boron is implanted into an n - type Si sample ( Nd = 1 0 1 6 / cm 3 ) , forming an abrupt

Boron is implanted into an n-type Si sample (Nd =1016/cm 3),
forming an abrupt junction of square cross section with area =2x10-3 cm 2. Assume that the
acceptor concentration in the p-type region is Na =1019/cm 3. Calculate Vo , x no, x po, Q+, and
E o for this junction at equilibrium (3

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