Boron (N_B = 10¹⁸ cm^-3) doped 1 m thick Si epitaxial layer was grown on As-doped Si substrate (N_As = 10¹⁸ cm^-3), forming an abrupt junction of square cross section with area A = 10^-4 cm². Calculate the contact potential , the penetration depth of the space charge region into the p- and n-type materials, Q₊ and the maximum value of the electric field for this diode at equilibrium (300 K). Draw an equilibrium band diagram for this diode assuming that the metal contact to p-type is Ohmic contact and metal contact to n-type is Schottky barriers