Circle the correct terms below: a) CVD typically has (high) / (low) growth rates compared to PVD. b) CVD allows one to deposit materials that typically (are) / (are not) hard to evaporate. c) CVD has (good)/(poor) reproducibility. d) CVD can (allow) / (not allow) one to grow epitaxial films. e) CVD process is typically a (low) / (high) temperature process. f) CVD process is usually a (simpler)/(more complicated) process than PVD. g) CVD generally (does) / (does not) use toxic or corrosive gasses. h) In oxidation of Si to form SiO2, (no) / (some) Si is consumed. i) In oxidation of Si to form SiO2, (none) / (some) / (all) of the SiO2 appears below the original Si surface. j) In CVD, gas phase decomposition (is) / (is not) typically the first step in the CVD process