Compute 0 , T , , and 0 for an npn BJT that has the following parameters: NE = 1019 cm-3, NB = 2 1017 cm-3, NC = 1017 cm-3, VBE = 0.8 V, VCB = 2.0 V The metallurgical widths of the emitter and base regions are WE = 0.2 m and WB = 0.2 m (note that the transistor has a short emitter!). Use DE = 3.8 cm2/s and DB = 15 cm2/s for the diffusion coefficients