Consider $2$ single MOS switches sized $2$m$/1$m$,$ and the capacitance at the Vo node is $40$ fF$.$ The device technological parameters are given as $$nCox $=4$pCox $=40$A$/$V$2,|=0\mathrm{.}5$ V$1/2,2$f $=0\mathrm{.}5$ V$,=0\mathrm{.}02$ V$-1,$ Vtno $=0\mathrm{.}6$ V$,$ and Vtpo $=-0\mathrm{.}8$ V$.$ VDD $=3\mathrm{.}3$ V$.$