Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15 [K], with a...

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Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15 [K], with a thickness of 250 [m]. The doping of the p- and n-regions of the solar cell is NA = 3.1016 [cm3] and ND = 1.101 [cm], respectively. The intrinsic carrier concentration of silicon at room temperature is n = 1.5.1010 [cm3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: T = 5 [s], Tp = 0.5 [s], D = 18 [cm s], D = 6 [cm2 s1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, G = 2.23. 109 [cm. s]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: L = Dn. Tn and L = Dp Tp A) What is the diffusion length of electrons in the p-type region L? Give the answer in micrometers [um]. Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15 [K], with a thickness of 250 [m]. The doping of the p- and n-regions of the solar cell is NA = 3.1016 [cm3] and ND = 1.101 [cm], respectively. The intrinsic carrier concentration of silicon at room temperature is n = 1.5.1010 [cm3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: T = 5 [s], Tp = 0.5 [s], D = 18 [cm s], D = 6 [cm2 s1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, G = 2.23. 109 [cm. s]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: L = Dn. Tn and L = Dp Tp A) What is the diffusion length of electrons in the p-type region L? Give the answer in micrometers [um].