Consider a GaAs pn junction diode at T $=300$ K with parameters Nd $=8$ x $1016$ cm$-3,$ Na $=2$ x $1015$ cm$-3,$ Dn $=207$ cm$2/$s$,$ Dp $=9\mathrm{.}80$ cm$2/$s$,$ o $=$ po $=$ no $=5$ x $10-8$ s$.($a$)$ Calculate the ideal reverse$-$biased saturation current density. $($b$)$ Find the reverse$-$biased generation current density if the diode is reverse biased at VR $=5$ V$.($c$)$ Determine the ratio of Jgen to Js$.$ Relative dielectric constant of GaAs is $13\mathrm{.}1.$