Question: Consider a MOS structure with n - type silicon. A metal - semiconductor work function difference of@ms = - 0 . 3 5 V is

Consider a MOS structure with n-type silicon. A metal-semiconductor work function difference of@ms =-0.35 V is required. Determine the silicon doping required to meet this specification when thegate is (a) n* polysilicon, (b) p* polysilicon, and (c) aluminum. If a particular gate cannot meet this requirement, explain why.

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