Consider a pn junction whose n side of the depletion region has different doping values. si=1010[F.m1],x0=40nm,NA= 1019[cm3],ND1=1016[cm3] and ND2=51015[cm3] a)Draw the charge density, the electric field, and the electric potential profiles. b) Calculate the depletion width W, the built-in potential, and the maximum electric field. c) For a forward bias voltage of 0.3V, draw the current density profiles for both eand h+, and the energy band diagrams, including the quasi-Fermi levels of both eand h+