Question: Consider a process in which pMOS transistors have three times the effective resistance as nMOS transistors. A unit inverter with equal rising and falling delays

Consider a process in which pMOS transistors have three times the effective resistance as nMOS transistors. A unit inverter with equal rising and falling delays in this process is shown in Figure 4.42. Calculate the logical efforts of a 2-input NAND gate and a 2-input NOR gate if they are designed with equal rising and falling delays. Consider a process in which pMOS transistors have three times the effective

FIGURE 4.42 Unit inverter

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