Consider a process technology for which $=0\mathrm{.}4/$xm$,$ tox $=8$ nm$,$ pin $=450$ cm$2/$V$$ s$,$ and V$,=0\mathrm{.}7$ V$.($a$)$ Find Cox and k$\text{'}$n $.($b$)$ For a MOSFET with W$/$L $=8/$im$/0.8/$im$,$ calculate the values of Vcs and V DSmi n needed to operate the transistor in the saturation region with a dc current ID $=100$ jiA. $($c$)$ For the device in $($b$),$ find the value of VGS required to cause the device to operate as a $1000-$Q resistor for very small vDS$.$