Consider a process technology for which: Lmin $=0\mathrm{.}4$m$,$ tox $=8$nm$,$n $=450$cm$2$N$.$s$,$ VT$=$ o$.$iv$,)..=0,$ox$=3\mathrm{.}45$ x $1011$ MaL Marks: SO i$)$ Find Cox and Kn$\text{'}$ ii$)$Find a MOSFETwith a $($W$/$L$)=(8$m$/0\mathrm{.}8$m$),$ calculate the values of Vas and Vosmin needed to operate the transistor in saturation region with a DC current of Ios $=100$A$.$ iii$)$ For the device in $($ii$),$ find the value of Vas required to cause die device to operate as a I $0000$ resistor for very small Vos.