Consider a silicon pn junction with a cross section area of $1$x$10-5$

cm

$2$

$,$ a reverse

bias Va $=-0\mathrm{.}5$V$,$ and the following parameters at T $=300$K:

$16315376$ N cm N cm s s $10,10,10,10$

d a p n

$$

$$

$22400/.,1000/.$

p n $$ cm V s cm V s $102141\mathrm{.}510,11\mathrm{.}78\mathrm{.}85410/$ ; $0\mathrm{.}025$ i s

kT n x cm F cm V

e

$$

$$

Assume the critical field to be equal to $3$x$105$ V$/$cm$.$

a$)(5$ points$)$ Compare the hole density at xn to the electron density at $-$xp

b$)(5$ points$)$ Compare the hole current at xn to the electron current at $-$xp

c$)(5$ points$)$ Determine the breakdown voltage.

d$)(10$ points$)$ Calculate the total number of excess electrons in the p bulk region.