Consider an npn bipolar junction transistor (BJT) having step junctions with the properties in Table Q4....
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Consider an npn bipolar junction transistor (BJT) having step junctions with the properties in Table Q4. NAB= 4 x 1017 cm-3 DPE = 3.7 cm²/s VEB = 0.8 V (forward bias) Table Q4 WB = 0.13 μm DnB = 12 cm²/s VCB = 2 V (reverse bias) WE = 0.2 μm a) Calculate the dopant concentration of NDE if the current gain in common emitter, ß is 300. Using the calculated value, estimate the maximum metallurgical base width, WBM in the npn BJT. b) Illustrate the energy band diagram of the npn BJT. Consider an npn bipolar junction transistor (BJT) having step junctions with the properties in Table Q4. NAB= 4 x 1017 cm-3 DPE = 3.7 cm²/s VEB = 0.8 V (forward bias) Table Q4 WB = 0.13 μm DnB = 12 cm²/s VCB = 2 V (reverse bias) WE = 0.2 μm a) Calculate the dopant concentration of NDE if the current gain in common emitter, ß is 300. Using the calculated value, estimate the maximum metallurgical base width, WBM in the npn BJT. b) Illustrate the energy band diagram of the npn BJT.
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Answer rating: 100% (QA)
a To calculate the dopant concentration of NDE we can use the following formula for the current gain in common emitter configuration DnBDPE WBWE expqV... View the full answer
Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, ? Paul J. Hurst Stephen H. Lewis, ? Robert G. Meyer
Posted Date:
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