Consider an optimized short channel (deep-submicron) n-MOSFET technology. In order to provide a higher voltage driving ability for a certain application, a device is fabricated with a thicker gate oxide instead of the standard one (optimized scaling). The doping level (NA) is adjusted so as to obtain an identical Vr (threshold voltage) for the standard device. Nothing else is changed from the optimized scaling technologies. Indicate the impact of the use of the thicker gate oxide on the parameters and figures of merit listed below. Choose one from (increase, decrease, or no effect). For each case, give the reason for your choice, OTHERWISE, YOU CAN GET A PENALTY. 1) How does N (acceptor doping density) have to be changed to maintain Vr (threshold voltage) unaffected?: (increase, decrease, or no effect ?) 2) Effective mobility (ueff) in the channel layer at a given VGs (increase, decrease, or no effect ?) 3) Electric field (Eox or Ei) in the oxide at threshold: (increase, decrease, or no effect?) 4) Minimum achievable gate length for a given DIBL criteria : (increase, decrease, or no effect?)