Question: Consider n - type silicon in a MOS structure at T = 3 0 0 K . ( a ) Determine the doping necessary so

Consider n-type silicon in a MOS structure at T =300 K.(a) Determine the doping necessary so that the maximum space charge density is QSD,max =7.5\times 109 C/cm2.[Note: this result requires a numerical solution or trial and error].(b) Determine the surface potential that results in the maximum de- pletion region width.

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