Question: Consider p - type silicon at T = 3 0 0 KT = 3 0 0 KT = 3 0 0 K doped to Na

Consider p-type silicon at T=300KT =300KT=300K doped to Na=51014cm3N_a =5\times 10^{14}\,\text{cm}^{-3}Na=51014cm3.
Assume excess carriers are present and assume that EFEFp=0.01kTE_F - E_{Fp}=0.01 kTEFEFp=0.01kT.
(a) Does this condition correspond to low injection? Why or why not?
(b) Determine EFnEFE_{Fn}- E_FEFnEF.

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!