Consider silicon at T $"300$ K$.$ A Hall effect device is fabricated with the follow$-$

ing geometry: d $"5$ & $10$#$3$

cm$,$ W $"5$ & $10$#$2$

cm$,$ and L $"0\mathrm{.}50$ cm$.$ The electri$-$

cal parameters measured are: Ix $"0\mathrm{.}50$ mA$,$ Vx $"1\mathrm{.}25$ V$,$ and Bz $"650$ gauss $"$

$6\mathrm{.}5$ & $10$#$2$

tesla. The Hall fi eld is EH $"$ #$16\mathrm{.}5$ mV$/$cm$.$ Determine $($a$)$ the Hall

voltage, $($b$)$ the conductivity type, $($c$)$ the majority carrier concentration, and $($d$)$ the

majority carrier mobility.