Sketch the energy-band diagrams indicating the Schottky-barrier height and the width of the depletion region (W),...

 

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Sketch the energy-band diagrams indicating the Schottky-barrier height and the width of the depletion region (W), for each of the following cases: (a) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = OV (b) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = -1V (c) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = 0.2 V (d) A contact between NiSi and uniformly doped p-type silicon with NA=10^17 /cm3, VA = 0 V Use the workfunction of NiSi (metal) of 4.7 eV. Assume T = 300 K. Sketch the energy-band diagrams indicating the Schottky-barrier height and the width of the depletion region (W), for each of the following cases: (a) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = OV (b) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = -1V (c) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = 0.2 V (d) A contact between NiSi and uniformly doped p-type silicon with NA=10^17 /cm3, VA = 0 V Use the workfunction of NiSi (metal) of 4.7 eV. Assume T = 300 K. Sketch the energy-band diagrams indicating the Schottky-barrier height and the width of the depletion region (W), for each of the following cases: (a) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = OV (b) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = -1V (c) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = 0.2 V (d) A contact between NiSi and uniformly doped p-type silicon with NA=10^17 /cm3, VA = 0 V Use the workfunction of NiSi (metal) of 4.7 eV. Assume T = 300 K. Sketch the energy-band diagrams indicating the Schottky-barrier height and the width of the depletion region (W), for each of the following cases: (a) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = OV (b) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = -1V (c) A contact between NiSi and uniformly doped n-type silicon with ND = 10^17 /cm3, VA = 0.2 V (d) A contact between NiSi and uniformly doped p-type silicon with NA=10^17 /cm3, VA = 0 V Use the workfunction of NiSi (metal) of 4.7 eV. Assume T = 300 K.

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The energyband diagrams illustrate the behavior of the energy bands and the formation of the Schottk... View the full answer