Transistor used in the following circuits are silicon (Ve=0.7 V) and Vce,sat-0.2 V The transistors in...

  

Transcribed Image Text:

Transistor used in the following circuits are silicon (Ve=0.7 V) and Vce,sat-0.2 V The transistors in the circuit shown have parameters D-MOSFET: V₂-4 V, I-5 mA, V-2.2 V; BJT: B=220 (a) Determine the quiescent currents and voltages of the FET/bipolar cascode amplifier shown. (12pt) (b) Calculate midband voltage gain, current gain, input and output impedances. (20pt) Z C₁ R₁ 4.64 K 500 15 V R₂ >4.22 K Rg 510 M Re 3.74 K R, 2.2 KS V₂ - Zo Transistor used in the following circuits are silicon (Ve=0.7 V) and Vce,sat-0.2 V The transistors in the circuit shown have parameters D-MOSFET: V₂-4 V, I-5 mA, V-2.2 V; BJT: B=220 (a) Determine the quiescent currents and voltages of the FET/bipolar cascode amplifier shown. (12pt) (b) Calculate midband voltage gain, current gain, input and output impedances. (20pt) Z C₁ R₁ 4.64 K 500 15 V R₂ >4.22 K Rg 510 M Re 3.74 K R, 2.2 KS V₂ - Zo