D $*16\mathrm{.}25$ Refer to the analysis of the resistive$-$load MOS inverter in Example $16\mathrm{.}2$ and utilize the expressions derived there for the various inverter parameters. For a technology for which Vt $=0\mathrm{.}3$VDD$,$ it is required to design the inverter to obtain VM $=$ VDD$/2.$ In terms of VDD$,$ what is the required value of the design parameter Vx$?$ What values are obtained for VOH, VOL, VIL, VIH, NMH$,$ and NML$,$ in terms of VDD$?$ Give numerical values for the case VDD $=1\mathrm{.}0$V$.$ Now, express the power dissipated in the inverter in its low$-$output state in terms of the transistor$$s W$/$L ratio. Let $=540$A$/$V$2.$ If the power dissipation is to be limited to approximately $100$W$,$ what W$/$L ratio is needed and what value of RD is used?