D9.2. Let Vm = 2x + 4x - 2y2 A in a certain region of free space. Find the vector force exerted on a straight wire segment in this region if it extends from the origin to: (a) PA(1,0,0) and carries 5 A in the a, direction; (b) Pb(0,0,1) and carries 5 A in the a, direction; (c) P(0.6,0.8,0) and carries 5 A away from the origin. Ans. 0; 25.1a, uN; 32.2a, un D9.3. The semiconductor sample shown in Fig. 9.1a is p-type silicon, having a rec- tangular cross section of 0.8 mm by 0.9 cm and a length of 1.25 cm. Assume the electron and hole mobilities are 0.14 and 0.05 m/V.s, respectively, at the operating temperature. With B = 0.05 T and an electric field intensity in the direction of the current flow of 750 V/m, find the magnitude of: (a) the voltage across the sample length; (b) the drift velocity; (c) the transverse force per coulomb of moving charge caused by B; (d) the transverse electric field intensity; (e) the Hall voltage. Ans. 9.38 V; 37.5 m/s; 1.875 N/C; 1.875 V/m; 16.88 m V