$.$ Device Scaling Design Constraints

A $1$ um N$-$MOSFET is used as a reference in investigating the effects of device design parameter changes on the dimension

scaled down device. The following device design parameters used in the original $1$ um NMOSFET are changed one at time while other device parameters remained unchanged:

$($ii$)$ Channel doping profile,

$($iii$)$ Gate oxide thickness $($Dox$),$

$($iv$)$ Deep source$/$drain junction profile

$($v$)$ Channel length $($L$)$

Determine their effects on $($i$)$ the subthreshold current $($Idsub$),($ii$)$ the $($iv$)$ the hot carrier effect $($HCE$)($iii$)$ the voltage to observe latch$-$up $($LU$),$ effect $($HCE$),$ and $(v)$ the drain induced barrier lowering $($DIBL$)$

Describe the assumption you use in answer the questions and Fill in ans with the following symbols:

$1$ increase $($in magnitude$)$ or better$/$improved $($in effect$)$

$v,$ decrease $($in magnitude$)$ or worse $($in effect$)$

$=$ unchanged