Differences between the work function of a metal and the work function of a semiconductor can lead to bending of the conduction and valence bands near that metal$-$semiconductor interface $($i$.$e$.,$ the semiconductor surface$).$ Match the following work function conditions with the resulting trends in carrier concentration for an n$-$type semiconductor.$$

Group of answer choices

Metal work function is less than the semiconductor work function

$[$ Choose $]$Fewer majority carriers at$/$near the surface than the bulk$$More majority carriers at$/$near the surface than the bulk$$Majority carriers become minority carriers at$/$near the surface$$Surface concentrations are the same as the bulk$$

Metal work function is equal to the semiconductor work function

$[$ Choose $]$Fewer majority carriers at$/$near the surface than the bulk$$More majority carriers at$/$near the surface than the bulk$$Majority carriers become minority carriers at$/$near the surface$$Surface concentrations are the same as the bulk$$

Metal work function is greater than the semiconductor work function

$[$ Choose $]$Fewer majority carriers at$/$near the surface than the bulk$$More majority carriers at$/$near the surface than the bulk$$Majority carriers become minority carriers at$/$near the surface$$Surface concentrations are the same as the bulk$$

Metal work function is much, much greater than the semiconductor work function