Draw the band diagram of the metal-semiconductor contact (metal and n-type GaAs) including numerical values of...
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Draw the band diagram of the metal-semiconductor contact (metal and n-type GaAs) including numerical values of depletion width (W) and built-in-potential barrier (qVo) with n-type doping levels of 10¹5 cm³ and 10¹8 cm³. Assume the barrier height (Schottky-barrier = 0.8 eV), intrinsic carrier concentration of GaAs = 2 x 106 cm³ at 300 K, 8GaAs, is 13.1, 80-8.85x10-¹4 F/cm, and bandgap of the GaAs at 300 K = 1.4 eV. Assume T-300K and KT=0.0259eV (b) Please provide in-depth discussion (including numerical value of doping concentration) for how we can make a facile Ohmic contact using the same metal-semiconductor contact of (a). Assume the electron tunneling can be provided with barrier width less than 10 nm. Draw the band diagram of the metal-semiconductor contact (metal and n-type GaAs) including numerical values of depletion width (W) and built-in-potential barrier (qVo) with n-type doping levels of 10¹5 cm³ and 10¹8 cm³. Assume the barrier height (Schottky-barrier = 0.8 eV), intrinsic carrier concentration of GaAs = 2 x 106 cm³ at 300 K, 8GaAs, is 13.1, 80-8.85x10-¹4 F/cm, and bandgap of the GaAs at 300 K = 1.4 eV. Assume T-300K and KT=0.0259eV (b) Please provide in-depth discussion (including numerical value of doping concentration) for how we can make a facile Ohmic contact using the same metal-semiconductor contact of (a). Assume the electron tunneling can be provided with barrier width less than 10 nm.
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, ? Paul J. Hurst Stephen H. Lewis, ? Robert G. Meyer
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