DRIFT AND RESISTANCE A semiconductor bar made of silicon has a cross-sectional area of 200 m2 and length of 400 m. It is grounded at x = 0 and biased at 1V at the other end, x = 400 m. Find: (A). The resistance and current at 300K when the bar is doped with 21017cm3 phosphorous (Refer to Fig. 3-23 of the textbook for the approximate mobility of doped Si). (B). The drift velocity of electrons in part (A). (C). The resistance and current at 300K when the bar is doped with 3 1017cm3 gallium and 1 1017cm3 arsenic. Assume full compensation. (D). The drift velocities of electrons and holes in part (c). Which out of the electrons or holes have a higher drift velocity? Justify your