Find the approximate metal$-$

semiconductor work function for a p$-$

substrate silicon MOSFET with a

n$+$polysilicon gate. The doping

concentration $($of acceptors$)$ is

$1014$cm$-3.$

A$)0\mathrm{.}9$ V

B$)-0\mathrm{.}4$ V

C$)-0\mathrm{.}55$ V

D$)-0\mathrm{.}8$ V

E$)-0\mathrm{.}95$ V