Question: Find the dc reverse bias voltage for a silicon p + - i - n + - i - n + IMPATT diode operated at

Find the dc reverse bias voltage for a silicon p+-i-n+-i-n+ IMPATT diode operated at 1 A.
The thickness of the first i-region is 1.5 pm, the second i-region is 4.5 pm, and the doping
in the n+ion is 1OIs cm3 with a width of 14 nm. The device area is 5~10~ cm2.
Neglect the temperature effect.

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