Question: FORWARD AND REVERSE BIAS Consider a p+-n Si junction at T = 300K with Na = 5 1018 cm3 and Nd = 5 1016 cm3

FORWARD AND REVERSE BIAS Consider a p+-n Si junction at T = 300K with Na = 5 1018 cm3 and Nd = 5 1016 cm3 . The minority carrier hole diffusion constant is Dp = 10cm2 /s and the minority carrier hole lifetime is p = 100ns. The crosssectional area of the junction is A = 104 cm2 . (A) Calculate the current at a forward bias Va = 0.6V and show that the current can be expressed in terms of Qp p . (B) Calculate the reverse saturation current

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