Question: g ) Consider an 1 5 mm - long, ( 1 0 lambda ) wide metal wire in a 0 . 6

g) Consider an 15 mm -long, \(10\lambda \) wide metal wire in a 0.6 um process. The sheet resistance of the metal is 0.08 ohm per square and the capacitance of a \(4\lambda \) wide wire is 0.2 fF per um. Construct a 5-segment \(\pi \)-model for the wire. (2 marks)
h) Assume one end of the wire is attached to the input of a \(10 x \) unit-sized inverter and a 2 x unit-sized inverter drives the other end of the wire. Also assume both the gate and diffusion capacitance of a minimum width transistor is 2 fF , the diffusion resistance of a minimum width nmos transistor is 2.5 k ohms and the diffusion resistance of a minimum width pmos transistor is 5 k ohms, and a unit-sized inverter consists of a 1x nmos transistor and a 2 x pmos transistor. Use the \(\pi \) model constructed in part g) to calculate the propagation delay from the \(2 x \) inverter to the 10 x inverter. (3 marks)
i) If a \(2 x \) inverter is inserted to drive the \(2^{\text {nd }},3^{\text {rd }},4^{\text {th }}\), and \(5^{\text {th }}\) segment, what will be the new propagation delay from the \(2 x \) inverter to the 10 x inverter. (3 marks)
g ) Consider an 1 5 mm - long, \ ( 1 0 \ lambda \

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