Question: g ) Consider an 1 5 mm - long, ( 1 0 lambda ) wide metal wire in a 0 . 6
g Consider an mm long, lambda wide metal wire in a um process. The sheet resistance of the metal is ohm per square and the capacitance of a lambda wide wire is fF per um Construct a segment pi model for the wire. marks
h Assume one end of the wire is attached to the input of a x unitsized inverter and a x unitsized inverter drives the other end of the wire. Also assume both the gate and diffusion capacitance of a minimum width transistor is fF the diffusion resistance of a minimum width nmos transistor is k ohms and the diffusion resistance of a minimum width pmos transistor is k ohms, and a unitsized inverter consists of a x nmos transistor and a x pmos transistor. Use the pi model constructed in part g to calculate the propagation delay from the x inverter to the x inverter. marks
i If a x inverter is inserted to drive the text nd text rd text th and text th segment, what will be the new propagation delay from the x inverter to the x inverter. marks
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