HALL EFFECT Aim: To study the Hatefect in the given semiconductor sale and hence to calculate the concentration of charge Carinthe sample Apparatus Har effect demonstration se consisting of a vectromagret digital meters for current and Voltage measurements and all probe Theory If a metal semiconductor carrying curent placed in a magnetic field potential difference Y Donation nom to be the magnetic field and current drections. This is now as HALL EFFECT Let semiconductor sample of thickness and motion A carrying current be acted upon by avere magnated a The magnetic fields to detect charge carries in the sample towards one of ting out of charges then this intum produces lected E weet of The probudly compensate magneticed. by where the camerconcertation charge of ton and the thickness of the sample the time known Hall Count Knowing the Hall Count The concentration of charge are in the sample can be determined by Since the election are not completely from the wewe ume, a correction factor is applied to the formula force concentration form 3 BI n no Bov. Procedure (1) Connect the probe to the demonstration and white (2) keep the distance between the com (3) sette sample current (4) More the magnet cuentro endast the voltagoogte ZERO on me (by using ZERO ADJUST (5 cense the magte 200 mA and other position le magnesc fields at Voltage maximum and take the reading the magnetron 250 300 350 400 m 450 000 maandete down the corresponding Halvoltages as mA m (6) Reduce the magnet utrotto zero and switch oft Repeat the closervationer minutes for second tris Draw a graph of a voltages magneticed and evaluate the st) 26: JAV AB Fig. 1 >B Magnetic Field Thickness of the sample 124 x 10 m Current through the sample Charge of an electron 10 X 100 Observations and Callations Slope from the graph Magnet tunert in A Magnete induction in Hal Voilagen V Test Second Average Canter concentration) (17.) 1) 7. Slope) Result Carrier concentration in the given sample -27