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Formula sheet

= 6. Consider the CMOS op-amp in Figure 6.1. The circuit parameters are I Bias 0.2 mA, VOD 0.9 V, and Vss = -0.9 V. The transistor parameters are kn = 4kp = 0.4 mA.V-2, Vtn = 0.4 V, and Vtp = -0.4 V; where the subscripts n and p denote NMOS and PMOS transistors respectively. (a) With the inputs v4 and v2 held at 0 V determine the W/L ratio of each transistor so that each of Q1, Q2, Q3, and Q4 is conducting a drain current of 0.1 mA and each of Q6 and Q7 a current of 0.2 mA. All transistors must operate at an overdrive voltage (VGs Vt) 0.2 V. Ignore the Early voltage. [8 marks] (b) Find the input common-mode range. [2 marks] (c) Find the allowable range of the output voltage. [2 marks] (d) With v1 = Via/2 and v2 = -Via/2, find the voltage gain vo/vid. Assume an Early voltage of 6 V. [5 marks] VDD . 04 LBias (1 Q. V Q2. 002 000 05 08 1 HEL Vss Figure 6.1 MOSFET formulas BJT formulas in = K[2(vgs Vt)Vps vs] (VBE ic = Is exp COME VT k' W V1 = 26 mV at room temperature id = K(Vgs V+)2 = (VGs V+)2 2 ic ic = Bib iB = (1 - alig K = fucox k' = = uCox LE = (3 + 1) B Im = 2K(vas V+) or Im = 210 Vgs-Vt B a = B+1 1-a 1 r = Ival Im = VT Itt = VT re = IB To VA Ic = 6. Consider the CMOS op-amp in Figure 6.1. The circuit parameters are I Bias 0.2 mA, VOD 0.9 V, and Vss = -0.9 V. The transistor parameters are kn = 4kp = 0.4 mA.V-2, Vtn = 0.4 V, and Vtp = -0.4 V; where the subscripts n and p denote NMOS and PMOS transistors respectively. (a) With the inputs v4 and v2 held at 0 V determine the W/L ratio of each transistor so that each of Q1, Q2, Q3, and Q4 is conducting a drain current of 0.1 mA and each of Q6 and Q7 a current of 0.2 mA. All transistors must operate at an overdrive voltage (VGs Vt) 0.2 V. Ignore the Early voltage. [8 marks] (b) Find the input common-mode range. [2 marks] (c) Find the allowable range of the output voltage. [2 marks] (d) With v1 = Via/2 and v2 = -Via/2, find the voltage gain vo/vid. Assume an Early voltage of 6 V. [5 marks] VDD . 04 LBias (1 Q. V Q2. 002 000 05 08 1 HEL Vss Figure 6.1 MOSFET formulas BJT formulas in = K[2(vgs Vt)Vps vs] (VBE ic = Is exp COME VT k' W V1 = 26 mV at room temperature id = K(Vgs V+)2 = (VGs V+)2 2 ic ic = Bib iB = (1 - alig K = fucox k' = = uCox LE = (3 + 1) B Im = 2K(vas V+) or Im = 210 Vgs-Vt B a = B+1 1-a 1 r = Ival Im = VT Itt = VT re = IB To VA Ic