I2

2 ) Solve the problem using the following conditions at the junction made of 300 K Gold and n - type Si ( Nd = 10^16 [cm ^- 3 ]). Nc of Si = 2.8 X 10^19 [ cm - 3 ], x = 4.01 [V], Eg = 1.12 [eV] m = 5.2 [V], in Gold. ( a ) Draw a schematic energy band diagram before bonding. ( b ) When the junction is established, find , Vbi and complete the energy band diagram. ( c ) At this time, find th w in the depletion layer of the depletion region near the junction, ( d ) find the -Emax value and indicate the location where this value appears. (e) If silver ( m = 4.26 [V]) was used instead of gold and the doping was changed, no space charge occurred at the junction boundary. At this time, draw the energy band diagram again. (f) find the doping value that satisfies (e) (g) Find the energy barrier seen when electrons move from a metal to a semiconductor in (e).