Question: In a hypothetical process sequence, {100} Si is oxidized in flowing H2/O2/N2 for 1 hour at 1100C, etched back 100nm, and then a second oxide
In a hypothetical process sequence, {100} Si is oxidized in flowing H2/O2/N2 for 1 hour at 1100C, etched back 100nm, and then a second oxide of 200nm is grown under H2/O2/N2 at 1000C. How long is the second oxidation interval
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