increasing n$-$type carrier concentration $($A$)$ Largest result upon increasing temperature $\_\_\_\_\_\_\_$ increasing n$-$type carrier mobility $($B$)$ Results from the doping of Ge with Ga $\_\_\_\_\_\_\_$ increasing Intrinsic conduction $($C$)$ Determined by Hall Measurements $\_\_\_\_\_\_\_$ increasing p$-$type carrier concentration $($D$)$ Largest effect of increase in temperature $\_\_\_\_\_\_\_$ increasing compensation $($E$)$ Characterized by a decrease in conduction; Associated with impure crystal