Let us assume we have a 120 m wide x 500 m long pattern in a SiO
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Let us assume we have a 120 µm wide x 500 µm long pattern in a SiO2 layer on top of a silicon wafer. What is the required etching time in minutes to release such a pattern in KOH in order to create a cantilever? We assume the wafer orientation is (100), the same as in the bi-morph example, and that the patterns are oriented at 45° from the flat as in the bi-morph example.
Related Book For
Fundamentals of Thermodynamics
ISBN: 978-0471152323
6th edition
Authors: Richard E. Sonntag, Claus Borgnakke, Gordon J. Van Wylen
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