Let's compare exposure times for photolithography and e$-$beam lithography. In both cases, let's assume a "smallest feature" length scale of $50$ nm $,$ and in both cases the entire structure will be fabricated on a square wafer $1$ cm to a side. For the UV case, you need a fluence of $\backslash (60\backslash$mathrm$\{$~mJ$\}/\backslash$mathrm$\{$cm$\}^\{2\}\backslash ),$ and your UV source has an output power of $10$ mW $.$ For the ebeam case, your beam has a current of $120$ pA $,$ and the resist needs a dosage of $240\backslash (\backslash$mu $\backslash$mathrm$\{$C$\}/\backslash$mathrm$\{$cm$\}^\{2\}\backslash ).$ Calculate for both a raster scan and a vector scan in which $\backslash (33\backslash \%\backslash )$ of the area is to be exposed with a shutter time of $\backslash (10\backslash \%\backslash )$ that of the dwell time.