Question: metal, with a work function @m = 4 . 2 V , Is deposited on an n - type siliconsemiconductor with Xa = 4 .

metal, with a work function @m =4.2 V, Is deposited on an n-type siliconsemiconductor with Xa =4.0 V and Eg =1.12 eV. Assume no interface states exist at thejunction. Let T =300 K.

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