Nc = 2.81 x 10^25 /m^3 Nv = 1.16 x 10^25 /m^3 Take E, =1.lev, m =0.26m,; m, =0.39m, Ni=7.5 x 10^15/m^3 at 300K N = 5 x 10^28/m^3 For silicon, use the following numbers: ( =0.15m'V 's", ( =0.05m V 's atom 1. Consider GaAs with band gap of 1.4 ev, effective masses me*=0.067, mh*=0.65, and mobilities me=8500 cm2/V-s, mh=400 cm2/V-s. a. What is the intrinsic concentration? b. What are the maximum electron and hole concentrations, Nc and Nv ? c. What is the intrinsic conductivity? d. At what temperature will the intrinsic conductivity be the same as for silicon at room temperature