Neamen: Problem $7\mathrm{.}18)$ An ideal one sided silicon n$+$p junction has Nd $=50$Na$.$

The built$-$in potential barrier is $0\mathrm{.}752$V$.$ The maximum electric field in the function

is $|$ ~E$|$max $=1\mathrm{.}14105$ V$/$cm when the reverse bias voltage is $10$V$.$ The junction is at

room temperature, T $=300$K$.$ Determine

$($a$)$ Na and Nd

Answer: Na $=4\mathrm{.}051015$ cm$3,$ Nd $=2\mathrm{.}021017$ cm$3.$

$($b$)$ xp assuming a $10$V reverse$-$bias voltage

Answer: $1\mathrm{.}81104$ cm

$($c$)$ C$($the capacitance per area$)$ for a $10$V reverse bias. Give your answer in units

of F$/$cm$2.$

Answer: $5\mathrm{.}6109$ F$/$cm$2$