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2. (30 points] Consider a patterned photoresist (orange) layer on a silicon wafer [gray] in Figure 2 below. L. b, and h are the length, width, and thickness of the patterns. The wavelength of UV is 400 nm. Take L1 = 1.51.; = L; = 80 mm. h1 = b; = 10 pm. 3b2_1 = 2b2_2 = b2_3 = 24 pm, and h = 5 pm. a} Select all possible PR types (among AZ series} that can be used to fabricate the patterns and determine the corresponding spin speedls] using the supplementary information below (see the last page). b] Determine the maximum gap between a mask and a substrate during photolithography considering the resolution of the patterns. c) Can you pattern smaller channels (bl using the same PR thickness? if yes, what is the smallest channel width you can achieve using either contact or proximity photolithography? IA A A 'o' Silicon Cross sectional View