p$-$n$-$p BJ has emitter $($N$),$ base $($Ns$),$ and collector $($N$.)$ doping of $10\%$ cm$-3,1018$ cm $3$

$3,$ and $1017$ cm $-3$

$10\text{'}$ cm $3,10\text{'}\%$ cm$,$ and $10\text{'}7$ cm$",$ respectively, and a base width of

$0,5$ micron. Calculate the peak electric field at the CB junction, and the CB depletion capacitance per unit area for the normal active mode of operation

with a Vc $=$ S$0$ V$.$ How much is the neutral base width narrowing at this

voltage, ignoring the EB depletion region? What impact does this have on the output characteristics of the BJT$,$ and what is this effect called? i the emitter$-$base forward bias is $0\mathrm{.}6$ V$,$ calculate the emitter current, assuming negligible recombination in the base, and emitter injection efficiency of $0\mathrm{.}9$ The electron and hole mobilities are $500$ and $200$ cm$?/$V$-$s$,$ respectively, and the device cross section is $0\mathrm{.}1$ square micron.