Part $3-$ Bias Calculations $-$ Step$-$by$-$step procedure for biasing the device

Follow the following steps $-$show calculations for lab report. Start with the NPN design, below.

Calculate Re from Ic and Vre requirements $($Ohm$\text{'}$s Law$).$ You may assume le $=$Ic for this

calculation.

Calculate Rc: First find Vc from Q point centering requirement, then V across RC$.$ Then use Ic

requirement to calculate RC$.$

Calculate R$1+$R$2$:

a$.$ Calculate Ib using Ic and typical beta,

b$.$ Calculate required current in the bias divider $($ R $1$ and R $2)$ using the bias divider requirement.

c$.$ Calculate R$1+$R$2$ as Vcc $/$ bias divider current from above.

Calculate Vb from Vre requirement and Vbe $($NPN$)$ or Veb $($PNP$)$ for silicon BJT $(0\mathrm{.}7$ V at room

temp$).$

Write the voltage divider equation for Vcc$,$R$1,$R$2$ and set equal to Vb $.$

Sub R$1+$R$2$ from $3)$ above into $5)$ above and calculate R$2,$ then calculate R$1.$

Sketch the equivalent design for the PNP amplifier $-$ use the PNP template below in Part $5.$

Note: you will end up with the same resistor values, just different placement.

If a $-8$ V supply was available, could the NPN design be converted to the PNP design be changing

ONLY the device and by replacing the $8$ V supply with a $-8$ V supply?