Particular CVD processing conditions (gas pressure, flow rates, temperature, etc.) that you are given are such as to place you near the boundary between transport-limited and reaction-rate limited (kinetically limited) growth. How would you change each of the parameters below to bring your film growth more toward the transport-limited regime; give a phrase explaining why in each case.[24]

e.reactant gas pressure (with no change in total pressure).i

f.Total pressure of non-reactant gases (pressure of reactants constant).

g.Total gas flow rate

h.Substrate temperature