Question: Phosphorus is implanted into silicon. The implant parameters are a dose of 1 0 1 5 cm 2 and an energy of 1 5 0

Phosphorus is implanted into silicon. The implant parameters are a dose of 1015cm2 and an energy of 150 keV.
(a) Find the depth of the peak of the implant profile and its value at that depth.
(b) If the wafer originally had 1016cm3 of boron uniformly distributed throughout, find the depth(s) at which the concentration of phosphorus is equal to the concentration of boron.

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